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Indium ingotCAS: 7440-74-6

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Synonyms: indium coating quality balzers; IndiumpowderNmesh; IndiumfoilNmmthickcagxmm; IndiumwireNmmdiacagm; IndiumshotNmmteardrops; Indiumpiecesirregular; Indiumingot; IndiumshotNmm; Indium foil (99.99%); Indium wireS50-0900; Indium shot (99.9%) 4mm tear drops; Indium shot (99.9999%) 4-8mm; Indium shot (99.99%) 4mm tear drops; Indium Classification: Elementary Substances
EINECS: 231-180-0 Molecular Formula: In
Melting Point: 156℃ Boiling Point: 2000℃
Stability: Stable. Incompatible with strong acids, strong oxidizing agents, sulfur. Water Solubility: insoluble
Refractive index: Flash Point: 2072°C
Purity: 99.99%,99.999%,99.9999% Appearance: silver
HazardClass: 8 Brand Name: CNBM
Packaging & Delivery
Packaging Detail: vacuum packing by bottle or bag
Delivery Detail:
Detailed Description

 Indium (In) 

1,Pure :99.995% - 99.9999%;

2,Technic:Electrolysis-Vacuum smeltingremoval of low melting point impurities.(Sn,S,Se,Pb,Cd,As,Hg,P );

3,Analysis :ICP-MS or GDMS 4N:All impurity elements is below 100ppm

4,Size : ; Ingot ;Granule ,Powder 

5,Service :Supply MSDS ,Free sample; Provide Solutions for Material Application.

6, Physical character: 

Atomic Weight: 114.818

Electronegative: 1.78

Density: ρ=7.31 g/cm3 (0-100)

Melting Point: 156.5985  

Boiling Point: 2072  

7, Specification: 

High Purity Indium: 

In-04 Grade 99.995. The content of Indium is above 99.995%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 50 ppm; 

In-05 Grade 99.999. The content of Indium is above 99.999%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm; 

Ultra Purity Indium:

In-06 Grade 99.9999. The content of Indium is above 99.9999%. The total content of Cd, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm; 

Ultra High Purity Indium:

In-07 Grade 99.99999. The content of Indium is above 99.99999%. The total content of Ag, Cd, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm; 

8, Physical Size: 

bar, Ingot, Granule.

9, Usage: 

It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.

10, packing: 

It is packed with Dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule

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Last Login:2018-04-17

Stanley Ran

Address:No.485 Tengfei 3rd Road, Southwest Economic airport, Shuangliu, Chengdu, Ch